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Advances in Rapid Thermal and Integrated Processing by Fred Roozeboom (auth.), Fred Roozeboom (eds.)

By Fred Roozeboom (auth.), Fred Roozeboom (eds.)

Rapid thermal and built-in processing is an rising single-wafer know-how in ULSI semiconductor production, electric engineering, utilized physics and fabrics technological know-how. the following, the physics and engineering of this expertise are mentioned on the graduate point. 3 interrelated components are lined. First, the thermophysics of photon-induced annealing of semiconductor and comparable fabrics, together with primary pyrometry and emissivity matters, the modelling of reactor designs and methods, and their relation to temperature uniformity. moment, procedure integration, treating the advances in uncomplicated apparatus layout, scale-up, built-in cluster-tool apparatus, together with wafer cleansing and built-in processing. 3rd, the deposition and processing of skinny epitaxial, dielectric and steel movies, overlaying selective deposition and epitaxy, built-in processing of layer stacks, and new parts of power program, similar to the processing of III-V semiconductor constructions and skinny- movie head processing for high-density magnetic information storage.

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Proc. 224,9 (1991). F. Roozeboom, Semicond. Int. 14 (10),74 (1991). F. Roozeboom, Mat. Res. Soc. Symp. Proc. 303, 149 (1993). 33. J. L. J. ), revised 2nd edition, 3rd printing, Environmental Res. Inst. of Michigan, Ann Arbor, 1989, pp. 97. 34. R. R. , Washington, 1992. 35. T. Sato, Jpn. J. Appl. Phys. 6, 339 (1967). 36. W. DeHart, Microelectr. Manufact. Technol. 14 (7),44 (1991). 37. J. Nulman, Soc. Photo-Opt. Instrum. Eng. Symp. Proc. 1189,72 (1989). 38. J. Nulman, B. Cohen, W. Blonigan, S. Antonio, R.

The need for good temperature control remains, but only for the steady-state phase. 7. Conclusions This chapter deals with the history and the perspectives of RTP. First, Moore's scaling law is treated: chip complexity has doubled every year as a result of reducing feature size, increasing chip size, and the cleverness of circuiUdevice design. This scaling will at least continue until 2010, as indicated in future roadmaps. For continued high device yields in future chip generations RTP, with its inherent low thermal budget may offer the technology of choice.

Appl. Phys. 33, 7061 (1994). L. Green, Chapter 7 of this book. A. Siaoui, L. Ventura, A. Lachiq, R. C. Muller, Mat. Res. Soc. Symp. Proc. 387, 365 (1995). C. S. L. Yeh, Mat. Res. Soc. Symp. Proc. 387,329 (1995). B. J. van der Linden, Mat. Res. Soc. Symp. Proc. 387,287 (1995). M. Moslehi, L. Velo, A. Paranjpe, J. Kuehne, S. Huang, R Chapman, C. Schaper, T. Breedijk, H. Najm, D. J. Lee, D. Anderson and C. Davis, Microelectr. Eng. 25, 93 (1994); see also Chapter 6 of this book. -L. Regolini, J. Margail, C.

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